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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION *With TO-220C package * High voltage,high speed * Low saturation voltage * High reliability APPLICATIONS *Switching regulators *DC-DC convertor *Solid state relay *General purpose power amplifiers
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2SC4273
*
Absolute maximum ratings(Tc=25)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature Open emitter Open base Open collector CONDITIONS VALUE 500 400 10 5 2 40 150 -55~150 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 3.0 UNIT /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4273
CHARACTERISTICS
Tj=25 unless otherwise specifie SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=1mA ; IE=0 IC=0.2A ; IB=0 IE=1mA ; IC=0 IC=2A; IB=0.4A IC=2A; IB=0.4A VCB=450V ;IE=0 VEB=10V; IC=0 IC=0.5A ; VCE=5V 25 MIN 500 400 10 0.8 1.2 100 100 55 TYP. MAX UNIT V V V V V A A
Switching times ton tstg tf Turn-on time Storage time Fall time VCC=200V; IC=2.5A IB1=0.25A;IB2=-0.5A; RL=60 1.0 2.5 0.5 s s s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4273
Fig.2 Outline dimensions (unindicated tolerance:0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4273
4


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